1. Asymmetric carrier penetration into hexagonal boron nitride in graphene field effect transistors Okada, Susumu, Maruyama, Mina, Gao, Yanlin Applied Physics Express 13 (7) 075005 (2020)
2. Mechanical properties of carbon nanotube under uniaxial tensile strain Kazufumi, Yoneyama, Mina, Maruyama, yanlin, GAO, Okada, Susumu Japanese Journal of Applied Physics 59 SIID02 (2020)
3. Influence of interlayer stacking arrangements on carrier accumulation in bilayer graphene field effect transistors Gao, Yanlin, Maruyama, Mina, Okada, Susumu Applied Physics Express 13 (6) 065006 (2020)
4. Structural effects on carrier doping in carbon nanotube thin-film transistors Gao, Yanlin, Okada, Susumu Journal of Applied Physics 127 (13) 134301 (2020)
5. Edge Morphology effect on field emission properties of graphene thin films GAO, Yanlin, Okada, Susumu Carbon 157 33 - 39 (2020)
6. Electronic state tuning of graphene nanorribons with pyridinic edges by hydrogenation Yasuma, Airi, Okada, Susumu, GAO, Yanlin, Maruyama, Mina Japanese Journal of Applied Physics 58 125001 (2019)
7. Field emission properties of edge-functionalized graphene Gao, Yanlin, Okada, Susumu CARBON 142 190 - 195 (2019)
8. Electrostatic properties of graphene edges for electron emission under an external electric field Yanlin Gao, Susumu Okada 112 (16) 163105-1 - 163105-5 (2018)
9. Polarization modulation of nanotrenches in GaN (0001)/(000(1)over-bar) by surface hydrogenation Tomoe Yayama, Yanlin Gao, Susumu Okada, Toyohiro Chikyow 56 (11) 111002-1 - 111002-7 (2017)
10. Energetics and electronic structures of thin films and heterostructures of a hexagonal GaN sheet Yanlin Gao, Susumu Okada 56 (6) 065201-1 - 065201-5 (2017)

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