都甲 薫 / Toko, Kaoru

数理物質系 准教授 / Associate Professor at Faculty of Pure and Applied Sciences

関連記事 / Related Articles in COTRE

劣化しない高性能フレキシブル熱電薄膜を開発 〜様々なIoT機器に搭載可能な電源素子への応用に期待〜
優れた電気的特性を有する半導体薄膜を開発 〜ガラス上ゲルマニウム薄膜の正孔移動度を大幅に向上〜
極微細領域の磁性研究と 実用化への発展
ナノスピンリサーチユニット
Magnetism Research in Ultrafine Fields and Its Application
最先端量子ビームを駆使して マテリアルス・サイエンスを切り開く
量子ビームリサーチユニット
Exploring a new dimension of materials science through utilization of frontier quantum beam technology

 

論文 / Publication

  1. Metal-induced layer exchange of group IV materials Toko, Kaoru, Suemasu, Takashi JOURNAL OF PHYSICS D-APPLIED PHYSICS 53 (37) (2020)
  2. Magnetic compensation at two different composition ratios in rare-earth-free Mn4-xCoxN ferrimagnetic films Mitarai, Haruka, Komori, Taro, Hirose, Taku, Ito, Keita, Ghosh, Sambit, Honda, Syuta, 都甲薫, Vila, Laurent, Attané, Jean-Philippe, Amemiya, Kenta, Suemasu, Takashi PHYSICAL REVIEW MATERIALS 4 (9) 094401-1 - 094401-7 (2020)
  3. Fabrication of high-photoresponsivity BaSi2 films formed on conductive layers by radio-frequency sputtering Koitabashi, Ryota, Nemoto, Taira, Mesuda, Masami, Toko, Kaoru, Suemasu, Takashi Applied Physics Express 13 (7) 075506 (2020)
  4. Fabrication of high-photoresponsivity BaSi2 films formed on conductive layers by radio-frequency sputtering Koitabashi, Ryota, Nemoto, Taira, Mesuda, Masami, Toko, Kaoru, Suemasu, Takashi Applied Physics Express 13 (7) 075506 (2020)
  5. Atomic hydrogen passivation for photoresponsivity enhancement of boron-doped p-BaSi2 films and performance improvement of boron-doped p-BaSi2/n-Si heterojunction solar cells Xu, Zhihao, Sato, Takuma, Benincasa, Louise, Yamashita, Yudai, Deng, Tianguo, Gotoh, Kazuhiro, Toko, Kaoru, Usami, Noritaka, Filonov, Andrew B, Migas, Dmitri B, Shohonov, Denis A, Suemasu, Takashi Journal of Applied Physics 127 (23) 233104 (2020)
  6. Impact of the carbon membrane inserted below Ni in the layer exchange of multilayer graphene Murata, H, Saitoh, N, Yoshizawa, N, Suemasu, T, Toko, K CRYSTENGCOMM 22 (18) 3106 - 3109 (2020)
  7. Zn-induced layer exchange of p- and n-type nanocrystalline SiGe layers for flexible thermoelectrics Tsuji, M, Kusano, K, Suemasu, T, Toko, K APPLIED PHYSICS LETTERS 116 (18) (2020)
  8. 350 degrees C synthesis of high-quality multilayer graphene on an insulator using Ni-induced layer exchange Murata, Hiromasa, Nozawa, Koki, Saitoh, Noriyuki, Yoshizawa, Noriko, Suemasu, Takashi, Toko, Kaoru APPLIED PHYSICS EXPRESS 13 (5) (2020)
  9. Significant enhancement of photoresponsivity in As-doped n-BaSi2 epitaxial films by atomic hydrogen passivation Aonuki, Sho, Yamashita, Yudai, Sato, Takuma, Xu, Zhihao, Gotoh, Kazuhiro, Toko, Kaoru, Terai, Yoshikazu, Usami, Noritaka, Suemasu, Takashi Applied Physics Express 13 (5) (2020)
  10. Fe-induced layer exchange of multilayer graphene for rechargeable battery anodes Nakajima, Yoshiki, Murata, Hiromasa, Kado, Yuya, Matsumura, Ryo, Fukata, Naoki, Suemasu, Takashi, Toko, Kaoru APPLIED PHYSICS EXPRESS 13 (2) (2020)

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知財 / Intellectual properties

  1. 2020-010274 : 半導体装置とその製造方法および熱電変換装置とその製造方法 都甲, 薫, 末益, 崇
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発行:筑波大学 URA研究戦略推進室・研究推進部