佐野 伸行 / Sano, Nobuyuki

数理物質系 教授 / Professor, Faculty of Pure and Applied Sciences

関連記事 / Related Articles in COTRE

極微細領域の磁性研究と 実用化への発展
ナノスピンリサーチユニット
Magnetism Research in Ultrafine Fields and Its Application

 

論文 / Publication

  1. Fundamental Aspects of Semiconductor Device Modeling Associated With Discrete Impurities: Monte Carlo Simulation Scheme Sano, Nobuyuki, Fukui, Takayuki IEEE TRANSACTIONS ON ELECTRON DEVICES 68 (11) 5394 - 5399 (2021)
  2. Quantum kinetic equation for the Wigner function and reduction to the Boltzmann transport equation under discrete impurities Sano, Nobuyuki PHYSICAL REVIEW E 104 (1) (2021)
  3. Effect of the double grading on the internal electric field and on the carrier collection in CIGS solar cells Lafuente-Sampietro, Alban, Yoshida, Katsuhisa, Wang, Shenghao, Ishizuka, Shogo, Shibata, Hajime, Sano, Nobuyuki, Akimoto, Katsuhiro, SAKURAI, TAKEAKI Solar Energy Materials and Solar Cells 223 110948 (2020)
  4. Potential application of p-i-n semiconductor capacitor with non-linear voltage-charge characteristic for secondary battery Yoshida, Katsuhisa, Sano, Nobuyuki JOURNAL OF APPLIED PHYSICS 128 (9) (2020)
  5. Fundamental Aspects of Semiconductor Device Modeling Associated With Discrete Impurities: Drift-Diffusion Simulation Scheme Sano, Nobuyuki, Yoshida, Katsuhisa, Tsukahara, Kohei, Park, Gyutae IEEE TRANSACTIONS ON ELECTRON DEVICES 67 (8) 3323 - 3328 (2020)
  6. Ambipolar device simulation based on the drift- diffusion model in ion-gated transition metal dichalcogenide transistors Ueda, Akiko, Zhang, Yijin, Sano, Nobuyuki, Imamura, Hiroshi, Iwasa, Yoshihiro npj Computational Materials 6 24 - 1 (2020)
  7. Monte Carlo simulation of random dopant fluctuation in C-V characteristics using image charge model and adequately determined length scale Chih-Wei, Yao, Sano, Nobuyuki, Watanabe, Hiroshi JAPANESE JOURNAL OF APPLIED PHYSICS 58 (9) (2019)
  8. Polarization Effect due to Discreteness of Dopants in Nano-Scale MOSFETs Yoshida, Katsuhisa, Tsukahara, Kohei, Sano, Nobuyuki IEEE Trans. Electron Dev. ED-66 (10) 4343 - 4347 (2019)
  9. Physics of Discrete Impurities under the Frameworkof Device Simulations for Nanostructure Devices Sano, Nobuyuki, Yoshida, Katsuhisa, Yao, Chih-Wei, Watanabe, Hiroshi Materials (Basel, Switzerland) 11 (12) (2018)
  10. Determination of band profiles in GaN films using hard X-ray photoelectron spectroscopy Shinji Saito, Masahiko Yoshiki, Shinya Nunoue, Nobuyuki Sano 56 (2) 0210003 (2017)
  11. Magnetization and spin-polarized conductance of asymmetrically hydrogenated graphene nanoribbons: significance of sigma bands Syuta Honda, Kouhei Inuzuka, Takeshi Inoshita, Norio Ota, Nobuyuki Sano 47 (48) (2014)
  12. Effect of dynamical Coulomb interaction on junctionless transistor performance: Monte Carlo study of plasmon excitations Katsuhisa Yoshida, Toru Shibamiya, Nobuyuki Sano 105 (3) (2014)
  13. ジャンクションレストランジスタにおけるNEGF法を用いたデバイスシミュレーション : 不純物散乱と遮蔽の影響の考察(プロセス・デバイス・回路シュミレーション及び一般) 植田, 暁子, Luisier, Mathieu, 吉田, 勝尚, 本多, 周太, 佐野, 伸行 電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス 113 (296) 61 - 64 (2013)
  14. Surface potential-based polycrystalline-silicon thin-film transistors compact model by Nonequilibrium approach Hiroyuki Ikeda, Nobuyuki Sano 60 (10) 3417 - 3423 (2013)
  15. One-flux theory of saturated drain current in nanoscale transistors Ting-wei Tang, Massimo V. Fischetti, Seonghoon Jin, Nobuyuki Sano 78 (SI) 115 - 120 (2012)
  16. Device simulation of intermediate band solar cells: Effects of doping and concentration Katsuhisa,Yoshida, Yoshitaka,Okada, Sano,Nobuyuki J. Appl. Phys. 112 084510 (2012)
  17. Multi-Scale Monte Carlo Simulation of Soft Errors Using PHITS-HyENEXSS Code System Shin-ichiro Abe, Yukinobu Watanabe, Nozomi Shibano, Nobuyuki Sano, Hiroshi Furuta, Masafumi Tsutsui, Taiki Uemura, Takahiko Arakawa 59 (4) 965 - 970 (2012)
  18. Multi-scale monte carlo simulation of soft errors using PHITS-HyENEXSS code system Shin-Ichiro Abe, Yukinobu Watanabe, Nozomi Shibano, Nobuyuki Sano, Hiroshi Furuta, Masafumi Tsutsui, Taiki Uemura, Takahiko Arakawa 59 (4) 965 - 970 (2012)
  19. Applicability of Nuclear Reaction Models Implemented in PHITS to Simulations on Single-event Effects S. Abe, S. Hirayama, Y. Watanabe, N. Sano, Y. Tosaka, M. Tsutsui, H. Furuta, T. Imamura 59 (2) 1443 - 1446 (2011)
  20. Impact of the Coulomb interaction on nano-scale silicon device characteristics Nobuyuki Sano 10 (1-2) 98 - 103 (2011)

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発行:筑波大学 URA研究戦略推進室・研究推進部