1. Monte Carlo simulation of random dopant fluctuation in C-V characteristics using image charge model and adequately determined length scale Chih-Wei, Yao, Sano, Nobuyuki, Watanabe, Hiroshi JAPANESE JOURNAL OF APPLIED PHYSICS 58 (9) (2019)
2. Polarization Effect due to Discreteness of Dopants in Nano-Scale MOSFETs Yoshida, Katsuhisa, Tsukahara, Kohei, Sano, Nobuyuki IEEE Trans. Electron Dev. ED-66 (10) 4343 - 4347 (2019)
3. Physics of Discrete Impurities under the Frameworkof Device Simulations for Nanostructure Devices Sano, Nobuyuki, Yoshida, Katsuhisa, Yao, Chih-Wei, Watanabe, Hiroshi Materials (Basel, Switzerland) 11 (12) (2018)
4. Determination of band profiles in GaN films using hard X-ray photoelectron spectroscopy Shinji Saito, Masahiko Yoshiki, Shinya Nunoue, Nobuyuki Sano 56 (2) 0210003 (2017)
5. Magnetization and spin-polarized conductance of asymmetrically hydrogenated graphene nanoribbons: significance of sigma bands Syuta Honda, Kouhei Inuzuka, Takeshi Inoshita, Norio Ota, Nobuyuki Sano 47 (48) (2014)
6. Effect of dynamical Coulomb interaction on junctionless transistor performance: Monte Carlo study of plasmon excitations Katsuhisa Yoshida, Toru Shibamiya, Nobuyuki Sano 105 (3) (2014)
7. ジャンクションレストランジスタにおけるNEGF法を用いたデバイスシミュレーション : 不純物散乱と遮蔽の影響の考察(プロセス・デバイス・回路シュミレーション及び一般) 植田, 暁子, Luisier, Mathieu, 吉田, 勝尚, 本多, 周太, 佐野, 伸行 電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス 113 (296) 61 - 64 (2013)
8. Surface potential-based polycrystalline-silicon thin-film transistors compact model by Nonequilibrium approach Hiroyuki Ikeda, Nobuyuki Sano 60 (10) 3417 - 3423 (2013)
9. One-flux theory of saturated drain current in nanoscale transistors Ting-wei Tang, Massimo V. Fischetti, Seonghoon Jin, Nobuyuki Sano 78 (SI) 115 - 120 (2012)
10. Device simulation of intermediate band solar cells: Effects of doping and concentration Katsuhisa,Yoshida, Yoshitaka,Okada, Sano,Nobuyuki J. Appl. Phys. 112 084510 (2012)

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