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収録対象は e-Rad で筑波大学に登録されている研究者、退職した研究者および連携大学院教員です。…続きを読む

ALUMNI

岡本 大 / Okamoto, Dai 2024年3月現在、筑波大学が主たる所属機関ではありません

筑波大学 数理物質系 助教 / Assistant Professor, Faculty of Pure and Applied Sciences, University of Tsukuba

 

論文 / Publication

  1. Energy distribution of Al2O3/diamond interface states characterized by high temperature capacitance-voltage method Xufang Zhang, Tsubasa Matsumoto, Ukyo Sakurai, Toshiharu Makino, Masahiko Ogura, Satoshi Yamasaki, Mitsuru Sometani, Dai Okamoto, Hiroshi Yano, Noriyuki Iwamuro, Takao Inokuma, Norio Tokuda 168 659 - 664 (2020)
  2. Conduction mechanisms of oxide leakage current in p-channel 4H-SiC MOSFETs Hiroki Nemoto, Dai Okamoto, Xufang Zhang, Mitsuru Sometani, Mitsuo Okamoto, Tetsuo Hatakeyama, Shinsuke Harada, Noriyuki Iwamuro, Hiroshi Yano Japanese Journal of Applied Physics 59 (4) 044003 (2020)
  3. Impact of crystal faces of 4H-SiC in SiO2/4H-SiC structures on interface trap densities and mobilities Tetsuo Hatakeyama, Teruyoshi Masuda, Mitsuru Sometani, Shinsuke Harada, Dai Okamoto, Hiroshi Yano, Yoshiyuki Yonezawa, Hajime Okumura APPLIED PHYSICS EXPRESS 12 (2) 201003-1 - 201003-5 (2019)
  4. Impact of oxide thickness on the density distribution of near-interface traps in 4H-SiC MOS capacitors Xufang Zhang, Dai Okamoto, Tetsuo Hatakeyama, Mitsuru Sometani, Shinsuke Harada, Noriyuki Iwamuro, Hiroshi Yano 57 (6) 06KA04-1 - 06KA04-5 (2018)
  5. Analysis of fast and slow responses in AC conductance curves for p-type SiC MOS capacitors Yuki Karamoto, Xufang Zhang, Dai Okamoto, Mitsuru Sometani, Tetsuo Hatakeyama, Shinsuke Harada, Noriyuki Iwamuro, Hiroshi Yano 57 (6) 06KA06-1 - 06KA06-6 (2018)
  6. Accurate evaluation of fast threshold voltage shift for SiC MOS devices under various gate bias stress conditions Mitsuru Sometani, Mitsuo Okamoto, Tetsuo Hatakeyama, Yohei Iwahashi, Mariko Hayashi, Dai Okamoto, Hiroshi Yano, Shinsuke Harada, Yoshiyuki Yonezawa, Hajime Okumura 57 (4) 04FA07-1 - 04FA07-7 (2018)
  7. Investigation of Maximum Junction Temperature for 4H-SiC MOSFET During Unclamped Inductive Switching Test Junjie An, Masaki Namai, Dai Okamoto, Hiroshi Yano, Hiroshi Tadano, Noriyuki Iwamuro 101 (1) 24 - 31 (2018)
  8. 異原子導入によるSiC MOSFETの特性改善 岡本, 大, 矢野裕司 応用物理 86 (9) 781 - 785 (2017)
  9. Characterization of near-interface traps at 4H-SiC metal-oxide-semiconductor interfaces using modified distributed circuit model Xufang Zhang, Dai Okamoto, Tetsuo Hatakeyama, Mitsuru Sometani, Shinsuke Harada, Ryoji Kosugi, Noriyuki Iwamuro, Hiroshi Yano 10 (6) 064101-1 - 064101-4 (2017)
  10. Characterization of traps at nitrided SiO2/SiC interfaces near the conduction band edge by using Hall effect measurements Tetsuo Hatakeyama, Yuji Kiuchi, Mitsuru Sometani, Shinsuke Harada, Dai Okamoto, Hiroshi Yano, Yoshiyuki Yonezawa, Hajime Okumura 10 (4) 046601 (2017)

researchmap の論文リストを表示する Show the publication list on researchmap

※上記の論文リストは researchmapから取得した論文リストにDOIリンク等の情報を付加したものです。筑波大学研究者総覧(TRIOS)または researchmapの論文リストが更新されると後日反映されます。

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